Light source module and backlight unit having the same

ABSTRACT

A backlight unit includes one or more light sources operable to emit light and a light guide plate arranged adjacent to the one or more light sources, reflected lights exiting the one or more light sources via the second surfaces and entering the light guide plate. A light source includes a light emitting device having a substrate and a semiconductor stack disposed on the substrate. The reflector is structured and positioned to block light emitted from a first surface of the light emitting device by reflecting the light emitted from the first surface toward second surfaces of the light source.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/256,712, filed Jan. 24, 2019, which is a continuation of U.S. patentapplication Ser. No. 14/274,293, filed on May 9, 2014, and claimingpriority from and the benefit of Korean Patent Application Nos.10-2013-0052531, filed on May 9, 2013, and 10-2013-0101025, filed onAug. 26, 2013, which are hereby incorporated by reference for allpurposes as if fully set forth herein.

BACKGROUND Field

The present disclosure relates to a light source module and, moreparticularly, to a light source module which realizes a slim structureand exhibits excellent luminous efficiency, and a backlight unitincluding the same.

Discussion of the Background

Generally, a backlight unit is broadly used as a light source forsupplying light to a liquid crystal display or as a surface-lightingdevice.

Backlight units of liquid crystal displays are classified into a directtype or an edge type according to locations of light emitting devices.

The direct type backlight unit has been mainly developed so as to keeppace with enlargement of liquid crystal displays to a size of 20 inchesor more, and includes a plurality of light sources placed under a lowersurface of a diffusive plate such that light can be directly emittedtowards a front side of a liquid crystal display panel. Such a directtype backlight unit provides higher efficiency in use of light than theedge type backlight unit and thus is mainly applied to large liquidcrystal displays that require high brightness.

The edge type backlight unit is generally applied to relatively smallliquid crystal displays such as monitors of laptop computers and desktopcomputers and has various advantages such as good uniformity of light,long lifespan, easy thickness reduction, and the like.

As recently proposed in the art, a light emitting diode packageadvantageous in terms of low power consumption and thickness reductionfor a slim structure is mounted on a substrate and disposed inside theedge type backlight unit.

However, although demand for thickness reduction to realize a slimstructure of the edge type backlight unit including the light emittingdiode package increases, packaging of a light emitting diode has alimitation in thickness reduction of the backlight unit and causesdeterioration in heat dissipation, thereby making it difficult to employa highly efficient light emitting diode chip.

SUMMARY

In one or more embodiments according to the present disclosure, abacklight unit includes one or more light sources operable to emit lightand a light guide plate. A light source includes a light emitting devicecomprising a substrate and a semiconductor stack disposed on thesubstrate and a reflector structured and positioned to block lightemitted from a first surface of the light emitting device by reflectingthe light emitted from the first surface toward second surfaces of thelight source. The light sources are arranged side by side and spacedapart with a predetermined distance. The light guide plate is arrangedadjacent to the one or more light sources, and reflected lights exit theone or more light sources via the second surfaces and enter the lightguide plate.

In at least one variant, the reflector is further structured andpositioned to guide the reflected light toward the second surfaces ofthe light source such that the reflected light is collected on thesecond surfaces of the light source.

In another variant, the backlight unit includes a wavelength conversionlayer covering the light emitting device. The wave conversion layercovers an upper surface and side surfaces of the light emitting device.

In further another variant, the reflector is disposed on the waveconversion layer and above an upper surface of the light emittingdevice, the reflector spaced apart from the first surface of the lightemitting device.

In another variant, the reflector is positioned to uncover the secondsurfaces of the light source. The reflector is further positioned to bein parallel to at least one surface of the light emitting device.

In another variant, the reflector further includes a resin coated with areflective layer.

In another variant, the reflector further includes a resin including areflective material.

In one or more embodiments according to the present disclosure, a lightsource for use in a backlight unit includes a light emitting devicecomprising a substrate and a semiconductor stack disposed on thesubstrate, one or more electrode pads placed under a lower side of thelight emitting device, and a reflector disposed relative to and spacedapart from an upper side of the light emitting device. The reflector isstructured and positioned to block light emitted from a first surface ofthe light emitting device by reflecting the light emitted from the firstsurface toward second surfaces of the light source. The first surface ofthe light emitting device is a light emitting surface and the secondsurfaces of the light source is a light exiting surface.

In one or more embodiments according to the present disclosure, a lightsource for use in a backlight unit includes a light emitting devicecomprising a substrate and a semiconductor stack disposed on thesubstrate, one or more electrode pads placed under a lower side of thelight emitting device, and a reflector disposed relative to and spacedapart from an upper side of the light emitting device. The reflector isstructured and positioned to block light emitted from a first surface ofthe light emitting device by reflecting the light emitted from the firstsurface toward second surfaces of the light source. The first surface ofthe light emitting device is a light emitting surface and the secondsurface of the light source is a light exiting surface.

In at least one variant, the reflector further comprise a resin coatedwith a reflective layer.

In another variant, the reflector further comprises a resin including areflective layer.

In further another variant, the reflective layer is further disposedabove the upper side of the light emitting device and guides reflectedlight toward the second surfaces of the light source.

In another variant, the second surfaces of the light source include sidesurfaces of the light source.

In one or more embodiments according to the present disclosure, a lightsource for use in a backlight unit includes a light emitting devicecomprising a substrate and a semiconductor stack disposed on thesubstrate, and one or more electrode pads placed under a lower side ofthe light emitting device. The light source further includes a resin anda reflective layer coated on the resin. The reflective layer is disposedrelative to and spaced apart from an upper side of the light emittingdevice. The reflective layer is structured and positioned to block lightemitted from a light emitting surface of the light emitting device byreflecting the light emitted from the light emitting surface toward alight exiting surface of the light source.

In another variant, the reflective layer is further disposed above theupper side of the light emitting device and guides reflected lighttoward the light exiting surface of the light source.

In further another variant, the light exiting surface of the lightsource includes a side surface of the light source.

In one or more embodiments according to the present disclosure, adisplay device includes a display panel on which an image is displayed,a backlight unit emitting light and disposed in a position to provideemitted light to the display panel, and a frame supporting the displaypanel and receiving the backlight unit. The backlight unit includes oneor more light sources operable to emit light. A light source includes alight emitting source comprising a substrate and a semiconductor stackdisposed on the substrate, and a reflector structured and positioned toblock light emitted from a first surface of the light emitting source byreflecting the light emitted from the first surface toward secondsurfaces of the light source. The light sources are arranged side byside and spaced apart with a predetermined distance. The backlight unitfurther a light guide plate arranged adjacent to the one or more lightsources and reflected lights exit the one or more light sources via thesecond surfaces and enter the light guide plate.

In at least one variant, the reflector is positioned to uncover thesecond surfaces of the light source. The reflector is further positionedto be in parallel to at least one surface of the light emitting source.

In another variant, the reflector further comprises a resin coated witha reflective layer.

In further another variant, the reflector further comprises a resinincluding a reflective material.

Exemplary embodiments of the present disclosure provide a light sourcemodule that provides high output and high efficiency and is advantageousin terms of thickness reduction.

Exemplary embodiments of the present disclosure provide a technologycapable of reducing thickness of a backlight unit so as to realize aslim structure of the backlight unit.

Exemplary embodiments of the present disclosure provide a novelbacklight unit capable of realizing a slim structure while permittingapplication of a highly efficient light emitting diode chip.

An exemplary embodiment of the present disclosure provides a lightsource module that includes: a circuit board; a light emitting diodechip mounted on the circuit board by flip-chip bonding or surface mounttechnology (SMT), a wavelength conversion layer placed on the lightemitting diode chip, and a reflector covering an upper surface and atleast one of side surfaces of the light emitting diode chip.

One side surface of the light emitting diode chip may be defined as anexit face, and the reflector may be placed on the wavelength conversionlayer and cover the upper surface and one side surface of the wavelengthconversion layer.

The upper surface of the light emitting diode chip may be defined as anexit face and the reflector may be placed on each of first and secondside surfaces symmetrical to each other among the side surfaces of thelight emitting diode chip.

One side surface of the light emitting diode chip may be defined as anexit face, the wavelength conversion layer may be placed on the exitface, and the reflector may cover an upper surface and the side surfacesof the light emitting diode chip excluding the exit face.

The reflector may directly contact the upper surface and the sidesurfaces of the light emitting diode chip.

The wavelength conversion layer may have a uniform thickness over theentirety thereof.

The upper surface of the light emitting diode chip may be defined as anexit face and the wavelength conversion layer may have a differentthickness in a region covering the exit face than the thickness in otherregions thereof.

One side surface of the light emitting diode chip may be defined as anexit face and the exit face may have a first convex-concave sectionhaving a convex-concave structure.

The wavelength conversion layer may have a convex-concave structureformed on an inner side thereof and corresponding to the firstconvex-concave section.

The wavelength conversion layer may include a second convex-concavesection of a convex-concave structure formed on an outer side thereof.

Another exemplary embodiment of the present disclosure provides abacklight unit, which includes: a light guide plate having a flatstructure over the entirety thereof; and a light source module placed atone side of the light guide plate, and including a circuit board, alight emitting diode chip mounted on the circuit board by flip-chipbonding or SMT, a wavelength conversion layer placed on the lightemitting diode chip and a reflector covering an upper surface and atleast one of side surfaces of the light emitting diode chip.

One surface of the circuit board may face one side surface of the lightguide plate and the light emitting diode chip may be placed on the onesurface of the circuit board.

An upper surface of the light emitting diode chip may be defined as anexit face and the reflector may be placed on first and second sidesurfaces symmetrical to each other among the side surfaces of the lightemitting diode chip.

The wavelength conversion layer may have a uniform thickness over theentirety thereof.

The wavelength conversion layer may have a different thickness in aregion covering the exit face than the thickness in other regionsthereof.

The circuit board may be placed parallel to the light guide plate, thelight emitting diode chip may be mounted on an upper surface of thecircuit board, one side surface of the light emitting diode chip may bedefined as an exit face, and the exit face may face one side surface ofthe light guide plate.

The reflector may be placed on the wavelength conversion layer and coveran upper surface and one side surface of the wavelength conversionlayer.

The wavelength conversion layer may be placed on the exit face and thereflector may cover the upper surface and the side surfaces of the lightemitting diode chip excluding the exit face.

The reflector may directly contact the upper surface and the sidesurfaces of the light emitting diode chip.

The exit face may include a first convex-concave section of aconvex-concave structure, the wavelength conversion layer may include aconvex-concave structure formed on an inner side thereof andcorresponding to the first convex-concave section, and a secondconvex-concave section of a convex-concave structure formed on an outerside thereof.

An exemplary embodiment of the present disclosure provides a backlightunit including a light guide plate, a first light source and a secondlight source adjacent to the light guide plate, each of the lightsources including a light emitting diode chip including a substrate anda semiconductor stack disposed on the substrate, a wavelength conversionlayer covering the light emitting diode chip, and a plurality ofreflectors disposed on at least two opposing side surfaces of the lightemitting diode chip, in which at least a portion of the wavelengthconversion layer of the first light source facing the second lightsource is exposed by the reflectors.

The first and second light sources may face each other through a surfaceon which the reflectors are not disposed, respectively.

The reflectors may include a first reflector and a second reflector, thefirst and second reflectors disposed on a substantially same plane astop and bottom surfaces of the light guide plate, respectively.

The first and second light sources may be disposed along a longitudinaldirection of the substrate with a first interval therebetween.

The wavelength conversion layer may have a first surface facing a lightentering surface of the light guide plate, and second side surfacesopposing each other, and the first surface and the second side surfacesmay be exposed by the reflectors.

The wavelength conversion layer may include a first region disposed onan upper surface of the light emitting diode chip, and a second regiondisposed on side surfaces of the light emitting diode chip, and thefirst region and the second region may have the same thickness.

The wavelength conversion layer may include a first region disposed onan upper surface of the light emitting diode chip, and a second regiondisposed on side surfaces of the light emitting diode chip, and thefirst region may have a greater thickness than the second region.

One end of the reflector may face the light guide plate and the otherend thereof may face the substrate.

A surface of the wavelength conversion layer interfacing the reflectormay have a convex-concave pattern.

The reflector may include at least one of a resin coated with areflective layer and a resin including a reflective material.

According to another exemplary embodiment of the present disclosureprovides a backlight unit including a light guide plate having asubstantially flat shape, at least one light source disposed adjacent tothe light guide plate, the light source including a semiconductor stack,a wavelength conversion layer covering the semiconductor stack, and areflective unit disposed on at least one side surfaces of the wavelengthcovering layer.

The reflective unit may include a first reflector disposed on a firstsurface of the light source, the first surface being disposed on asubstantially the same plane as an upper surface of the light guideplate, and a second reflector disposed on a second surface of the lightsource, the second surface being disposed on a substantially the sameplane as a bottom surface of the light guide plate.

The backlight unit may further include a printed circuit board (PCB), inwhich the light source is provided in plural on the PCB, and thereflective unit of each light source covers each side surface of thewavelength conversion layer that contacts the PCB and is substantiallyparallel to a longitudinal direction of the PCB.

A surface of the wavelength conversion layer interfacing the reflectiveunit may have a convex-concave pattern.

The reflective unit may include at least one of a resin coated with areflective layer and a resin including a reflective material.

An upper surface of the reflective unit may be flush with an uppersurface of the wavelength conversion layer.

A lower surface of the reflective unit is flush with a lower surface ofthe wavelength conversion layer.

The first and second reflectors are not disposed on a surface of thelight source that faces an adjacent light source.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view of a light emitting device in abacklight unit according to the present disclosure;

FIG. 2A is a plan view of the light emitting diode chip shown in FIG. 1and FIG. 2B is a sectional view of the light emitting diode chip takenalong line I-I′ of FIG. 2A;

FIG. 3 is an exploded perspective view of a display device including abacklight unit according to one embodiment of the present disclosure;

FIG. 4 is a perspective view of a light source module according to oneembodiment of the present disclosure;

FIG. 5 is a sectional view of the display device taken along line II-II′of FIG. 3;

FIG. 6 is a sectional view of a light source module according to anotherembodiment of the present disclosure;

FIG. 7 is a detailed view of region A of FIG. 6;

FIG. 8 is a sectional view of a light source module according to afurther embodiment of the present disclosure;

FIG. 9 is a detailed view of region A of FIG. 8; and

FIG. 10 is a sectional view of a display device including a light sourcemodule according to another embodiment of the present disclosure or alight source module according to a further embodiment of the presentdisclosure.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be described indetail with reference to the accompanying drawings. The followingembodiments are provided as examples so as to fully convey the spirit ofthe present disclosure to those skilled in the art. Accordingly, thepresent disclosure is not limited to the embodiments disclosed hereinand may also be implemented in different forms. In the drawings, width,length, thickness, and the like of components may be exaggerated forconvenience. Throughout the present specification, like referencenumerals denote like components having the same or similar functions. Itwill be apparent to those skilled in the art that modifications andchanges of components falling within the scope of the present disclosuredo not include definitive meanings and the spirit and scope of theinvention should be defined only by the appended claims and theirequivalents.

Next, exemplary embodiments of the present disclosure will be describedin detail with reference to the accompanying drawings such that thepresent disclosure can be easily implemented by those skilled in theart.

FIG. 1 is a schematic sectional view of a light emitting device in abacklight unit according to the present disclosure.

Referring to FIG. 1, a light emitting device 100 provided to thebacklight unit according to the present disclosure includes a lightemitting diode chip 110, a wavelength conversion layer 120, and areflector.

The light emitting diode chip 110 includes a substrate 111 and asemiconductor stack 113, and may further include electrode pads 115,117.

The light emitting diode chip 110 is a flip chip and the electrode pads115, 117 are placed under a lower side of the chip.

The substrate 111 may be a growth substrate for growing a semiconductorlayer, and may be, for example, a sapphire substrate or a galliumnitride substrate. Particularly, when the substrate 111 is a sapphiresubstrate, the semiconductor stack 113, the sapphire substrate 111 andthe wavelength conversion layer 120 have indices of refraction ingradually descending order, thereby improving light extractionefficiency. In some embodiments, the substrate 111 may be omitted.

The semiconductor stack 113 is formed of a gallium nitride-basedcompound semiconductor and may emit ultraviolet (UV) or blue light.

The light emitting diode chip 110 is directly mounted on a circuit board(not shown). The light emitting diode chip 110 is directly mounted onthe circuit board to be electrically connected to a printed circuitthereon by flip-chip bonding without using a bonding wire. According tothe present disclosure, since the bonding wire is not used when bondingthe light emitting diode chip 110 onto the circuit board, there is noneed for a molding section for protection of the wire and for partialremoval of the wavelength conversion layer 120 to expose a bonding pad.Accordingly, the use of the flip-chip type light emitting diode chip 110can prevent color deviation or brightness spots and can simplify theprocess of fabricating the light emitting module, as compared with alight emitting diode chip using the bonding wire. Here, the lightemitting diode chip 110 may be mounted on the circuit board by SMT(surface mount technology) as well as flip-chip bonding. SMT is atechnology for directly mounting surface-mounted components (SMC) on thecircuit board.

The wavelength conversion layer 120 covers the light emitting diode chip110. As shown, the wavelength conversion layer 120 is formed to surroundan upper surface and side surfaces of the light emitting diode chip 110.For example, a phosphor layer may be formed on the light emitting diodechip 110 to convert a wavelength of light emitted from the lightemitting diode chip 110. The wavelength conversion layer 120 may beformed to a predetermined thickness on the light emitting diode chip 110by coating so as to cover the upper surface and the side surfaces of thelight emitting diode chip 110. Here, the wavelength conversion layer 120may have a uniform thickness over the entirety thereof.

The wavelength conversion layer 120 may be formed in a structure inwhich a first wavelength conversion layer covering the side surfaces ofthe light emitting diode chip 110 has a smaller thickness than a secondwavelength conversion layer covering the upper surface of the lightemitting diode chip 110. Here, the light emitting diode chip 110 is aflip-chip type diode and emits more light in an upper direction thereofthan in directions of both side surfaces thereof. Accordingly, the lightemitting diode chip 110 according to the present disclosure may bedesigned such that the second wavelength conversion layer, through whicha relatively large amount of light is emitted, has a greater thicknessthan the first wavelength conversion layer in order to obtain light in adesired wavelength band.

The reflector covers opposite sides of the wavelength conversion layer120. The reflector includes a first reflector 130 a placed on one sideof the wavelength conversion layer 120 and a second reflector 130 bplaced on the other side of the wavelength conversion layer 120. Assuch, the first and second reflectors 130 a, 130 b are placed on theopposite sides of the wavelength conversion layer 120, which aresymmetrical to each other. The first and second reflectors 130 a, 130 breflect light, the wavelength of which has been converted by thewavelength conversion layer 120, towards the upper surface or other sidesurfaces of the light emitting device 100. That is, the first and secondreflectors 130 a, 130 b serve to reflect light traveling to some sidesurfaces of the light emitting device 100 so as to collect the light onthe upper surface or on the other side surfaces of the light emittingdevice 100.

The light emitting device 100 according to the present disclosure canrealize various colors using the light, particularly, mixed light suchas white light, emitted from the light emitting diode chip 110 and thewavelength conversion layer 120. In addition, the light emitting device100 according to the present disclosure can maximize luminous efficiencyby reflecting the light emitted towards some side surfaces of the lightemitting device 100 through the first and second reflectors 130 a, 130 bto collect the light on the upper surface and desired side surfaces ofthe light emitting device 100.

Referring to FIG. 2AA and FIG. 2BB, the structure of the light emittingdiode chip 110 will be described in detail.

FIG. 2A is a plan view of the light emitting diode chip shown in FIG. 1and FIG. 2B is a sectional view of the light emitting diode chip takenalong line I-I′ of FIG. 2A.

As shown in FIG. 2A and FIG. 2B, the light emitting diode chip accordingto the present disclosure includes a first conductive type semiconductorlayer 23 formed on a growth substrate 21 and a plurality of mesas Mformed on the first conductive type semiconductor layer 23 to beseparated from each other. Each of the plural mesas M includes an activelayer 25 and a second conductive type semiconductor layer 27. The activelayer 25 is placed between the first conductive type semiconductor layer23 and the second conductive type semiconductor layer 27. In addition,reflective electrodes 30 are placed on each of the plural mesas M.

As shown, the plural mesas M may have an elongated shape and extendparallel to each other in one direction. Such a shape simplifiesformation of the plurality of mesas M having the same shape in aplurality of chip regions on the growth substrate 21.

On the other hand, the reflective electrodes 30 may be formed on each ofthe mesas M after formation of the mesas M, without being limitedthereto. Alternatively, after second conductive type semiconductor layer27 is formed, the reflective electrodes 30 may be formed on the secondconductive type semiconductor layer 27 before formation of the mesas M.The reflective electrodes 30 cover most of an upper surface of the mesaM and have substantially the same shape as a shape of the mesa M in planview.

The reflective electrodes 30 include a reflective layer 28 and mayfurther include a barrier layer 29. The barrier layer 29 may cover anupper surface and side surfaces of the reflective layer 28. For example,a pattern of the reflective layer 28 is formed and then the barrierlayer 29 is formed thereon, whereby the barrier layer 29 can be formedto cover the upper surface and the side surfaces of the reflective layer28. For example, the reflective layer 28 may be formed by depositing Ag,Ag alloys, Ni/Ag, NiZn/Ag, or TiO/Ag, followed by patterning. Thebarrier layer 29 may be formed of Ni, Cr, Ti, Pt, Rd, Ru, W, Mo, TiW, orcombinations thereof, and prevents diffusion or contamination ofmetallic materials in the reflective layer.

After the plural mesas M are formed, an edge of the first conductivetype semiconductor layer 23 may also be etched. As a result, an uppersurface of the substrate 21 may be exposed. A side surface of the firstconductive type semiconductor layer 23 may also be slantly formed.

According to the present disclosure, the light emitting diode chipfurther includes a lower insulation layer 31 that covers the pluralityof mesas M and the first conductive type semiconductor layer 23. Thelower insulation layer 31 has openings formed in specific regions andallowing electrical connection to the first conductive typesemiconductor layer 23 and the second conductive type semiconductorlayer 27. For example, the lower insulation layer 31 may have openingsthat expose the first conductive type semiconductor layer 23, andopenings that expose the reflective electrodes 30.

The openings may be placed between the mesas M and near an edge of thesubstrate 21, and may have an elongated shape extending along the mesasM. On the other hand, some openings are restrictively placed on themesas to be biased towards the same ends of the mesas.

According to the present disclosure, the light emitting diode chipincludes a current spreading layer 33 formed on the lower insulationlayer 31. The current spreading layer 33 covers the plurality of mesas Mand the first conductive type semiconductor layer 23. In addition, thecurrent spreading layer 33 has openings, which are placed within upperareas of the mesas M and expose the reflective electrodes, respectively.The current spreading layer 33 may form ohmic contact with the firstconductive type semiconductor layer 23 through the openings of the lowerinsulation layer 31. The current spreading layer 33 is insulated fromthe plural mesas M and the reflective electrodes 30 by the lowerinsulation layer 31.

The openings of the current spreading layer 33 have a larger area thanthe openings of the lower insulation layer 31 in order to prevent thecurrent spreading layer 33 from contacting the reflective electrodes 30.

The current spreading layer 33 is formed over a substantially overallupper area of the substrate 21 excluding the openings. Accordingly,current can be easily dispersed through the current spreading layer 33.The current spreading layer 33 may include a highly reflective metallayer, such as an Al layer, and the highly reflective metal layer may beformed on a bonding layer, such as Ti, Cr, Ni or the like. Further, aprotective layer having a monolayer or composite layer structure of Ni,Cr or Au may be formed on the highly reflective metal layer. The currentspreading layer 33 may have a multilayer structure of, for example,Ti/Al/Ti/Ni/Au.

The light emitting diode chip according to the present disclosureincludes an upper insulation layer 35 formed on the current spreadinglayer 33. The upper insulation layer 35 has openings which expose thecurrent spreading layer 33, and openings which expose the reflectiveelectrodes 30.

The upper insulation layer 35 may be formed of an oxide insulationlayer, a nitride insulation layer, combinations thereof, or a polymersuch as polyimide, Teflon, Parylene, and the like.

A first pad 37 a and a second pad 37 b are formed on the upperinsulation layer 35. The first pad 37 a is connected to the currentspreading layer 33 through the opening of the upper insulation layer 35and the second pad 37 b is connected to the reflective electrodes 30through the openings of the upper insulation layer 35. The first pad 37a and the second pad 37 b may be used as pads for SMT or connection ofbumps for mounting the light emitting diode on the circuit board, andthe like.

The first and second pads 37 a, 37 b may be formed simultaneously by thesame process, for example, a photolithography and etching process or alift-off process. The first and second electrode pads 37 a, 37 b mayinclude a bonding layer formed of, for example, Ti, Cr, Ni, and thelike, and a highly conductive metal layer formed of Al, Cu, Ag, Au, andthe like. The first and second pads 37 a, 37 b may be formed such thatdistal ends of the electrode pads are placed on the same plane, wherebythe light emitting diode chip can be flip-chip bonded to a conductivepattern formed to the same thickness on the circuit board.

Then, the growth substrate 21 is divided into individual light emittingdiode chip units, thereby providing finished light emitting diode chips.The substrate 21 may be removed from the light emitting diode chipsbefore or after division into individual light emitting diode chipunits.

As such, the light emitting diode chip according to the presentdisclosure directly mounted on the circuit board by flip-chip bondingcan realize high efficiency and size reduction for a slim structure, ascompared with a typical package type light emitting device.

FIG. 3 is an exploded perspective view of a display device including anedge type backlight unit according to one embodiment of the presentdisclosure; FIG. 4 is a perspective view of a light source moduleaccording to one embodiment of the present disclosure; and FIG. 5 is asectional view of the display device taken along line II-II′ of FIG. 3.

Referring to FIG. 3 to FIG. 5, a display device including an edge typebacklight unit according to one embodiment of the invention includes adisplay panel DP on which an image will be displayed, a backlight unitBLU disposed at the rear side of the display panel DP and emittinglight, a frame 240 supporting the display panel DP and receiving thebacklight unit BLU, and a top cover 280 surrounding the display panelDP.

The display panel DP includes a color filter substrate FS and a thinfilm transistor substrate SS assembled to each other to face each otherwhile maintaining a uniform cell gap. The display panel DP may furtherinclude a liquid crystal layer between the color filter substrate FS andthe thin film transistor substrate SS according to the kind thereof.

Although not shown in detail, the thin film transistor substrate SSincludes a plurality of gate lines and data lines, which cross eachother to define pixels therebetween, and a thin film transistor placedin each of crossing regions therebetween and connected to a pixelelectrode mounted in each of the pixels in one-to-one correspondence.The color filter substrate FS includes R, G and B color filterscorresponding to the respective pixels, a black matrix disposed alongthe periphery of the substrate and shielding the gate lines, data linesand thin film transistors, and a common electrode covering all of thesecomponents. Here, the common electrode may be formed on the thin filmtransistor substrate SS.

The backlight unit BLU supplies light to the display panel DP, andincludes a lower cover 270 partially open at an upper side thereof, alight source module disposed at one side within the lower cover 270 anda light guide plate 250 disposed parallel to the light source module toconvert point light into surface light.

In addition, the backlight unit BLU according to the present disclosureincludes optical sheets 230 placed on the light guide plate 250 todiffuse and collect light, and a reflective sheet 260 placed below thelight guide plate 250 to reflect light travelling in a lower directionof the light guide plate 250 toward the display panel DP.

The light source module includes a circuit board 220 having a conductivepattern formed thereon, and a plurality of light emitting devices 100mounted on one surface of the circuit board 220 and separated apredetermined distance from each other.

Each of the plural light emitting devices 100 includes a light emittingdiode chip 110, a wavelength conversion layer 120, and first and secondreflectors 130 a, 130 b.

The wavelength conversion layer 120 is configured to surround an uppersurface and side surfaces of the light emitting diode chip 110. Thewavelength conversion layer 120 may have a uniform thickness over theentirety thereof. Alternatively, the wavelength conversion layer 120 mayinclude a first wavelength conversion layer covering both side surfacesof the light emitting diode chip 110 and a second wavelength conversionlayer covering the upper surface of the light emitting diode chip 110,in which the second wavelength conversion layer has a greater thicknessthan the first wavelength conversion layer. The reason why the secondwavelength conversion layer is formed to have a greater thickness thanthe first wavelength conversion layer is that the light emitting diodechip 110 emits a greater amount of light through the upper surfacethereof than through the side surfaces thereof.

The first and second reflectors 130 a, 130 b are placed on oppositesides of the wavelength conversion layer 120. More specifically, thefirst and second reflectors 130 a, 130 b may be symmetrical to eachother in a first direction FD. The first direction FD may be defined asa direction perpendicular to a longitudinal direction of the circuitboard 220 on one surface of the circuit board 220. In addition, thefirst direction FD may be defined as a direction perpendicular to alongitudinal direction of an incident face of the light guide plate 250.A second direction SD is defined as a direction perpendicular to thefirst direction FD. That is, the second direction SD may correspond tothe longitudinal direction of the circuit board 220. In addition, thesecond direction SD may correspond to the longitudinal direction of theincident face of the light guide plate 250. Here, the incident face ofthe light guide plate 250 may be defined as one side surface of thelight guide plate 250 through which light emitted from the lightemitting device 100 enters the light guide plate 250.

Each of the first and second reflectors 130 a, 130 b has one end facingthe circuit board 220 and the other end facing the incident face of thelight guide plate 250.

The first and second reflectors 130 a, 130 b covers the overall sidesurfaces of the wavelength conversion layer 120, which are symmetricalto each other in the first direction FD. Each of the first and secondreflectors 130 a, 130 b may be formed by coating a reflective materialon one surface of a resin, or may be composed of a resin containing areflective material.

The first reflector 130 a is placed parallel to an upper surface of thelight guide plate 250.

The second reflector 130 b is placed parallel to a lower surface of thelight guide plate 250.

Although not shown in detail, the light emitting device 100 may includea convex-concave structure formed in a boundary region between each ofthe first and second reflectors 130 a, 130 b and the wavelengthconversion layer 120 to change a reflection angle of light.

The wavelength conversion layer 120 includes first exit faces 132exposed from the first and second reflectors 130 a, 130 b in the seconddirection SD corresponding to the longitudinal direction of the circuitboard 220, and a second exit face 121 exposed from the first and secondreflectors 130 a, 130 b so as to face the incident face of the lightguide plate 250.

As such, the backlight unit BLU of the present disclosure can realize aslim structure by the highly efficient flip-chip type light emittingdevices each having the first and second reflectors 130 a, 130 b in thefirst direction FD, as compared with a typical backlight unit.

In addition, the backlight unit BLU of the present disclosure can reducelight loss by the highly efficient flip-chip type light emitting deviceseach having the first and second reflectors 130 a, 130 b in the firstdirection FD, and can realize high efficiency through improvement inheat dissipation by a COB structure directly mounted on the circuitboard 220.

FIG. 6 is a sectional view of a light source module according to anotherembodiment of the present disclosure and FIG. 7 is a detailed view ofregion A of FIG. 6.

Referring to FIG. 6 and FIG. 7, a light source module 300 according tothis embodiment have the same features as those of the light emittingdevice 100 shown in FIG. 1 excluding a wavelength conversion layer 320,a reflector 330 and a circuit board 220. Thus, the same components ofthe light source module 300 will be denoted by the same referencenumerals as those of the above embodiments and detailed descriptionsthereof will be omitted.

The circuit board 220 includes substrate pads 221, 223 electricallyconnected to a light emitting diode chip 110 and bumpers 225, 227respectively placed on the substrate pads 221, 223.

In the light source module 300, the light emitting diode chip 110 isdirectly mounted on the circuit board 220. The light emitting diode chip110 is mounted on the circuit board to be electrically connected to thesubstrate pads 221, 223 on the circuit board 220 by flip-chip bondingwithout using a bonding wire. Here, the bumpers 225, 227 may be placedbetween the substrate pads 221, 223 and electrode pads 115, 117 exposedon a lower surface of the light emitting diode chip 110, respectively.In the light source module 300 according to the present disclosure,since the bonding wire is not used when bonding the light emitting diodechip 110 onto the circuit board, there is no need for a molding sectionfor protection of the wire and for partial removal of the wavelengthconversion layer 320 to expose a bonding pad. Accordingly, use of theflip-chip type light emitting diode chip 110 can prevent color deviationor bright spots and can simplify the process of fabricating the lightemitting module, as compared with a light emitting diode chip using thebonding wire. Here, the light emitting diode chip 220 may be mounted onthe circuit board by SMT as well as flip-chip bonding.

The wavelength conversion layer 320 covers the light emitting diode chip110. As shown, the wavelength conversion layer 320 is formed to surroundan upper surface and side surfaces of the light emitting diode chip 110.For example, a phosphor layer may be formed on the light emitting diodechip 110 to convert a wavelength of light emitted from the lightemitting diode chip 110. The wavelength conversion layer 320 may beformed to a predetermined thickness on the light emitting diode chip 110by coating to cover the upper surface and the side surfaces of the lightemitting diode chip 110. The wavelength conversion layer 320 may have auniform thickness over the entirety thereof. Alternatively, in thewavelength conversion layer 320, a region covering the upper surface ofthe light emitting diode chip 110 may have a different thickness thanregions covering the side surfaces of the light emitting diode chip 110.Alternatively, the wavelength conversion layer 320 may have differentthicknesses in a region covering an exit face EA and in the regionscovering the upper surface and the side surfaces of the light emittingdiode chip 110 excluding the exit face EA. Here, the exit face EA mayface one side surface of the light emitting diode chip 110.

The reflector 330 covers the upper surface and the side surfaces of thewavelength conversion layer 320 excluding the exit face EA. Thereflector 330 serves to reflect light, the wavelength of which has beenconverted by the wavelength conversion layer 320, towards the exit faceEA. That is, the reflector 330 serves to guide light to exit through oneside surface of the light source module 300.

The light source module 300 includes first and second convex-concavesections 351, 353 having a convex-concave structure to reduce totalreflection depending upon an incident angle of light. The first andsecond convex-concave sections 351, 353 may be placed on regionscorresponding to the exit face EA.

The first convex-concave section 351 may be formed on one side surfaceof the light emitting diode chip 110 corresponding to the exit face EA.Accordingly, the wavelength conversion layer 320 has an inner sidesurface that has a structure corresponding to the first convex-concavesection 351.

The second convex-concave section 353 may be formed on one side surfaceof the wavelength conversion layer 320 corresponding to the exit faceEA.

Although not particularly limited to a certain method, a method offabricating the light source module 300 may include, for example,mounting the light emitting diode chip 110 on the circuit board 220through flip-chip bonding, forming the wavelength conversion layer 320on the light emitting diode chip 110 through deposition, forming thereflector 330 on the wavelength conversion layer 320 through deposition,and removing part of the reflector 330 corresponding to the exit face EAthrough fly cutting or etching.

The light source module 300 according to this embodiment guides light tobe emitted through the exit face EA defined by one side surface of thereflector 330, whereby the light can be collected in a desireddirection, thereby maximizing luminous efficiency.

Further, in the light source module 300 according to this embodiment,the light emitting diode chip 110 is a flip-chip type light emittingdiode chip directly mounted on the circuit board 220 by flip-chipbonding, and can realize high efficiency and size reduction for a slimstructure, as compared with a typical package type light emittingdevice.

Furthermore, the light source module 300 according to this embodiment isadvantageous in terms of thickness reduction, as compared with a typicalpackage type light source module.

FIG. 8 is a sectional view of a light source module according to afurther embodiment of the present disclosure and FIG. 9 is a detailedview of region A of FIG. 8.

As shown in FIG. 8 and FIG. 9, a light source module 400 according tothis embodiment has the same features as those of the light sourcemodule 300 of FIG. 6 and FIG. 7 excluding a wavelength conversion layer420 and a reflector 430. Thus, the same components of the light sourcemodule 400 will be denoted by the same reference numerals as those ofthe above embodiments and detailed descriptions thereof will be omitted.

The light source module 400 includes a light emitting diode chip 110directly mounted on the circuit board 220. The light emitting diode chip110 is electrically connected to substrate pads 221, 223 on the circuitboard 220 by flip-chip bonding without using a bonding wire. Here,bumpers 225, 227 may be placed between the substrate pads 221, 223 andthe electrode pads 115, 117 exposed on a lower surface of the lightemitting diode chip 110, respectively. In the light source module 400according to the present disclosure, since the bonding wire is not usedwhen bonding the light emitting diode chip onto the circuit board, thereis no need for a molding section for protection of the wire and forpartial removal of the wavelength conversion layer 420 to expose abonding pad. Accordingly, the use of the flip-chip type light emittingdiode chip 110 can prevent color deviation or brightness spots and cansimplify the process of fabricating the light emitting module, ascompared with a light emitting diode chip using the bonding wire.

The wavelength conversion layer 420 is placed on one side surface of thelight emitting diode chip 110. The wavelength conversion layer 420 isplaced on the exit face EA of the light source module 400. Thewavelength conversion layer 420 can convert a wavelength of lightemitted from the light emitting diode chip 110. The wavelengthconversion layer 420 is coated onto the light emitting diode chip 110and has a constant thickness. Here, the exit face EA may correspond toone side surface of the light emitting diode chip 110.

The reflector 430 covers the light emitting diode chip 110. Thereflector 430 may cover an upper surface and side surfaces of the lightemitting diode chip 110, and may also cover an upper surface of thewavelength conversion layer 420. That is, the reflector 430 may directlycontact the upper surface and side surfaces of the light emitting diodechip 110. The reflector 430 serves to reflect light emitted from thelight emitting diode chip 110 towards the wavelength conversion layer420. That is, the reflector 430 serves to guide light to be collected onthe exit face EA of the light source module 400.

The light source module 400 includes first and second convex-concavesections 451, 453 having a convex-concave structure to reduce totalreflection depending upon an incident angle of light. The first andsecond convex-concave sections 451, 453 may be placed on regionscorresponding to the exit face EA.

The first convex-concave section 451 may be formed on one side surfaceof the light emitting diode chip 110 corresponding to the exit face EA.Accordingly, the wavelength conversion layer 420 has an inner sidesurface that has a structure corresponding to the first convex-concavesection 451.

The second convex-concave section 453 may be formed on one side surfaceof the wavelength conversion layer 420 corresponding to the exit faceEA.

The light source module 400 according to this embodiment guides light tobe emitted through the exit face EA defined by one side surface of thereflector 430, whereby the light can be collected in a desireddirection, thereby maximizing luminous efficiency.

Further, in the light source module 400 according to this embodiment,the light emitting diode chip 110 is a flip-chip type light emittingdiode chip directly mounted on the circuit board 220 by flip-chipbonding, and can realize high efficiency and size reduction for a slimstructure, as compared with a typical package type light emittingdevice.

Furthermore, the light source module 400 according to this embodiment isadvantageous in terms of thickness reduction, as compared with a typicalpackage type light source module. Particularly, since the reflector 430covers the light emitting diode chip 110 and the wavelength conversionlayer 420 is placed on the exit face EA, the light source module 400 isadvantageous in terms of thickness reduction.

FIG. 10 is a sectional view of a display device including a light sourcemodule according to yet another embodiment of the present disclosure ora light source module according to still yet another embodiment of thepresent disclosure.

As shown in FIG. 10, the display device according to the presentdisclosure includes the light source modules 300 or 400 as shown in FIG.6 to FIG. 9, and has the same features as those of the display deviceshown in FIG. 5 excluding the light source module 300 or 400. Thus, thesame components of the display device will be denoted by the samereference numerals as those of the above embodiment and detaileddescriptions thereof will be omitted.

Each of the light source modules 300, 400 has a structure of a lightemitting diode chip mounted on the circuit board by flip-chip bonding,and is configured to collect light on an exit face facing one sidesurface of the light guide plate 250 defined as an incident face of thelight guide plate 250.

The circuit board is disposed parallel to a reflective sheet 260. Thatis, the circuit board may be placed on an inner surface of a lower cover270.

The light source modules 300, 400 are a lateral light emitting type of aflip-chip structure and can maximize size reduction of the backlightunit to provide a slim structure.

In addition, the backlight unit according to the present disclosureemploys the light source module 300 or 400, which is a lateral lightemitting type of the flip-chip structure, and thus can reducemanufacturing costs by omitting a housing or a reflection member forreflecting light towards the light guide plate 250.

While various embodiments of the present disclosure have been described,the present disclosure is not limited to a particular embodiment. Inaddition, the components described in the specific embodiment may beused for other embodiments in the same or similar ways, withoutdeparting from the spirit and the scope of the present disclosure.

What is claimed is:
 1. A backlight unit comprising: one or more lightsources operable to emit light, a light source comprising: a lightemitting device comprising a substrate and a semiconductor stackdisposed on the substrate; and a reflector structured and positioned toblock light emitted from a first surface of the light emitting device byreflecting the light emitted from the first surface toward secondsurfaces of the light source; wherein the light sources are arrangedside by side and spaced apart with a predetermined distance; and a lightguide plate arranged adjacent to the one or more light sources,reflected lights exiting the one or more light sources via the secondsurfaces and entering the light guide plate.
 2. The backlight unit ofclaim 1, wherein the reflector is further structured and positioned toguide the reflected light toward the second surfaces of the light sourcesuch that the reflected light is collected on the second surfaces of thelight source.
 3. The backlight unit of claim 1, further comprising awavelength conversion layer covering the light emitting device, whereinthe wave conversion layer covers an upper surface and side surfaces ofthe light emitting device.
 4. The backlight unit of claim 3, wherein thereflector is disposed on the wave conversion layer and above an uppersurface of the light emitting device, the reflector spaced apart fromthe first surface of the light emitting device.
 5. The backlight unit ofclaim 1, wherein: the reflector is positioned to uncover the secondsurfaces of the light source; and the reflector is further positioned tobe in parallel to at least one surface of the light emitting device. 6.The backlight unit of claim 1, wherein the reflector further comprises aresin coated with a reflective layer.
 7. The backlight unit of claim 1,wherein the reflector further comprises a resin including a reflectivematerial.
 8. A light source for use in a backlight unit comprising: alight emitting device comprising a substrate and a semiconductor stackdisposed on the substrate; one or more electrode pads placed under alower side of the light emitting device; and a reflector disposedrelative to and spaced apart from an upper side of the light emittingdevice, the reflector structured and positioned to block light emittedfrom a first surface of the light emitting device by reflecting thelight emitted from the first surface toward second surfaces of the lightsource; wherein the first surface of the light emitting device is alight emitting surface and the second surfaces of the light source is alight exiting surface.
 9. The light source of claim 8, wherein thereflector further comprises a resin coated with a reflective layer. 10.The light source of claim 8, wherein the reflector further comprises aresin including a reflective layer.
 11. The light source of claim 10,wherein the reflective layer is further disposed above the upper side ofthe light emitting device and guides reflected light toward the secondsurfaces of the light source.
 12. The light source of claim 11, whereinthe second surfaces of the light source include side surfaces of thelight source.
 13. A light source for use in a backlight unit comprising:a light emitting device comprising a substrate and a semiconductor stackdisposed on the substrate; and one or more electrode pads placed under alower side of the light emitting device; a resin; a reflective layercoated on the resin, the reflective layer disposed relative to andspaced apart from an upper side of the light emitting device, thereflective layer structured and positioned to block light emitted from alight emitting surface of the light emitting device by reflecting thelight emitted from the light emitting surface toward a light exitingsurface of the light source.
 14. The light source of claim 13, whereinthe reflective layer is further disposed above the upper side of thelight emitting device.
 15. The light source of claim 14, wherein thereflective layer guides reflected light toward the light exiting surfaceof the light source.
 16. The light source of claim 13, wherein the lightexiting surface of the light source includes a side surface of the lightsource.
 17. A display device comprising: a display panel on which animage is displayed; a backlight unit emitting light and disposed in aposition to provide emitted light to the display panel; and a framesupporting the display panel and receiving the backlight unit; whereinthe backlight unit comprises one or more light sources operable to emitlight, a light source comprising: a light emitting source comprising asubstrate and a semiconductor stack disposed on the substrate; and areflector structured and positioned to block light emitted from a firstsurface of the light emitting source by reflecting the light emittedfrom the first surface toward second surfaces of the light source;wherein the one or more light sources are arranged side by side andspaced apart with a predetermined distance; a light guide plate arrangedadjacent to the one or more light sources, reflected lights exiting theone or more light sources via the second surfaces and entering the lightguide plate.
 18. The display device of claim 17, wherein: the reflectoris positioned to uncover the second surfaces of the light source; andthe reflector is further positioned to be in parallel to at least onesurface of the light emitting source.
 19. The display device of claim17, wherein the reflector further comprises a resin coated with areflective layer.
 20. The display device of claim 17, wherein thereflector further comprises a resin including a reflective material.